纳米等离子体激光器研究进展

赵青, 黄小平, 林恩, 等. 纳米等离子体激光器研究进展[J]. 光电工程, 2017, 44(2): 140-151. doi: 10.3969/j.issn.1003-501X.2017.02.002
引用本文: 赵青, 黄小平, 林恩, 等. 纳米等离子体激光器研究进展[J]. 光电工程, 2017, 44(2): 140-151. doi: 10.3969/j.issn.1003-501X.2017.02.002
Zhao Qing, Huang Xiaoping, Lin En, et al. Advances of plasmonic nanolasers[J]. Opto-Electronic Engineering, 2017, 44(2): 140-151. doi: 10.3969/j.issn.1003-501X.2017.02.002
Citation: Zhao Qing, Huang Xiaoping, Lin En, et al. Advances of plasmonic nanolasers[J]. Opto-Electronic Engineering, 2017, 44(2): 140-151. doi: 10.3969/j.issn.1003-501X.2017.02.002

纳米等离子体激光器研究进展

  • 基金项目:
    国家863计划资助项目(2015AA8095044A)
详细信息

Advances of plasmonic nanolasers

  • Fund Project:
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  • 半导体激光器在生物技术、信息存储、光子医学诊疗等方面得到了广泛应用。随着纳米技术和纳米光子学的发展,紧凑微型化激光器应用前景引人关注。当激光器谐振腔尺寸减小到发射波长时,电磁谐振腔中将产生更为有趣的物理效应。因此,在发展低维、低泵浦阈值的超快相干光源,以及纳米光电集成和等离激元光路时,减小半导体激光器的三维尺寸至关重要。在本综述中,首先介绍了纳米等离子体激光器中的谐振腔模式增益和限制因子的总体理论,并综述了金属-绝缘材料-半导体纳米(MIS)结构或其它相关金属覆盖半导体结构的纳米等离子体激光器各方面的总体研究进展。特别地,对基于MIS结构的等离子体谐振腔实现纳米等离子体激光器三维衍射极限的突破,进行了详细的介绍。本文也介绍并展望了纳米等离子体激光器的技术挑战和发展趋势,为纳米激光器进一步研究提供参考。

  • Abstract: Semiconductor lasers are widely used for applications in biology, information storage, photonics and medical therapeutics. Along with the emerging area of nano-optics and nanophotonics, more compact lasers with size miniaturization attract significant interest. Last decades, many researchers tried to investigate the miniaturization technology of photon laser. The aiming is to obtain higher density devices integrated on smaller semiconductor chip. As the cavity size is reduced with respect to the emission wavelength, interesting physical effects, unique to electromagnetic cavities, arise. So, to scale down the semiconductor lasers in all three dimensions plays an important role in the developing of low-dimension, low-threshold, and ultrafast coherent light sources, as well as integrated nano-optoelectronic and plasmonic circuits. For this purpose, the nanolasers and smaller plasmonic nanolasers are developed during the last years. However, for the conventional semiconductor laser using dielectric cavity oscillator (photon cavity), the noticeable obstacle from diffraction limit confines the feature sizes of the nanodevices all the time, and makes them unable to get down to half wavelength level. These years, the invention of plasmonic nanolaser, where the light is enhanced by stimulated emission based on surface plasmon, can break through the bottleneck of optical diffraction limit and give out light with subwavelength scale. In this review, above all, the principle of cavity used in laser and the theory of the modal gain are illustrated generally. Besides, the important properties and the technical characters of the plasmonic nanolasers are introduced briefly. Then, the overall research progress of the plasmonic nanolasers are presented, which is explained by some typical plasmonic nanolasers, such as, surface palsmon-optical mode hybrid nanolaser, metal-dielectric heterogenic cavity plasmonic nanolaser, metal-insulator-semiconductor (MIS) subwavelength plasmonic nanolaser are introduced by turn. In addition, an updated overview of the latest developments, particularly in plasmonic nanolasers using the MIS configuration and other related metal-cladded semiconductor microlasers is presented. In particular, it has been experimentally demonstrated that the use of plasmonic cavities based on MIS nanostructures can indeed break the diffraction limit in all three dimensions. The research group proposed a new plasmonic nanolaser based on semiconductor nanowire/air spacer/metal film composited structure. This structure can get modes coupling between the surface plasmon on the metal and the high gain nanowire, which makes the enhancement effect increased obviously. It is shown that the structure can confine the output optical field to subwavength scale, and keep low transmission loss and high ability of the confinement. In this review, the experimental results are presented in detail. In the end, we give a contrast about the parameters and results for the new achievement in palsmonic nanolasers research area. Based on the recent development of the plasmonic nanolaser, we conclude about the developing trend. We also give some perspectives on the challenges and development trend for the plasmonic nanolasers. This review can provide useful guide for the research of plasmonic nanolasers.

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  • 图 1  纳米线谐振腔工作原理. (a)纳米Fabry–Pérot谐振腔工作原理示意图. (b)纳米线介质波导激光器和纳米线腔-金属壳等离子体激光器模式分布结构原理图[14].

    Figure 1.  The working principle of the nanowire cavity. (a) The diagram of the Fabry–Pérot nanocavity. (b) The distributions of the modes in nanowire dielectric waveguide laser and nanowire-metal coated cavity plasmonic laser[14].

    图 2  表面等离子体-光模混合纳米激光器. (a)激光器原理图及微观结构的扫描电子显微镜照片. (b)纳米线与金属膜之间模式分布[33].

    Figure 2.  Plasmonic-optical hybrid modes nanolaser. (a) Principle diagram and its scanning electron microscope (SEM) picture inserted. (b) Distribution of the mode between the nanowire and the metal layer[33].

    图 3  R=70 nm的纯介质波导和银壳-半导体芯波导的色散关系[39].

    Figure 3.  The dispersion curves of the dielectric waveguide and Ag film coated-semiconductor waveguide with R=70 nm[39].

    图 4  (a), (b)金膜包裹的半导体柱腔异质结等离子体激光器件结构. (c)~(e)模场强度的三维结构模拟[42].

    Figure 4.  (a), (b) Schematic of the metal coated semiconductor heterogeneous plasmonic laser. (c)~(e) The modes simulation with three-dimensional structure[42].

    图 5  光泵浦亚波长金属-介质-半导体激光器原理图. (a)结构图. (b)模拟的模式分布[24].

    Figure 5.  Schematic of the light pumped metal-dielectric-metal subwavelength laser. (a) Diagram of the laser structure. (b) Numerical mode distribution[24].

    图 6  (a) 纳米线阵列等离子体激光器结构原理图. (b)~(d)微结构图[50].

    Figure 6.  (a) Principle diagram of the arrayed nanowires palsmonic laser. (b)~(d) Its SEM pictures[50].

    图 7  纳米等离子体激光器纳米线表面(a1)~(a4)未镀膜和(b1)~(b4)镀上金属-介质复合膜后的激光发射谱, 2 mW/cm2~10 mW/cm2,间隔2.5 mW/cm2,室温[50].

    Figure 7.  The emission spectra of the plasmonic nanolaser (a1)~ (a4) with and (b1)~(b4) without metal-dielectric layers at room temperature. The pumping light intensity is from 2 mW/cm2 to 10 mW/cm2 with spacing of 2.5 mW/cm2 [50].

    图 8  纳米线谐振腔内场分布. (a)单根氧化锌纳米线内场分布特性. (b)氧化锌纳米线/二氧化硅/银结构内场分布特性[50].

    Figure 8.  The interior intensity distributions of the nanowire cavity. (a) Single ZnO nanowire; (b) Single ZnO nanowire with SiO2 and Ag sandwiched structure[50].

    图 9  半导体异质结激光器件的(a) SEM图片,(b)泵浦电流和(c)电致发光谱[50].

    Figure 9.  (a) SEM picture, (b) pumping current and (c) electroluminescence spectra of the semiconductor heterogeneous laser[50].

    图 10  半导体异质结纳米等离子体阵列激光器件的电致发光光斑图.所用电流分别为(a) 25 mA, (b) 30 mA, (c) 50 mA, (d) 80 mA, (e) 100 mA和(f) 120 mA.

    Figure 10.  Electroluminescence spots of the semiconductor heterogeneous laser. The pumping electric current is (a) 25 mA, (b) 30 mA, (c) 50 mA, (d) 80 mA, (e) 100 mA, and (f)

    图 11  (a) 聚焦准直微透镜结构图. (b)纳米线SEM图片. (c), (d)工作原理图[49].

    Figure 11.  (a) The schematic of the focusing collimated microlens. (b) SEM picture of the nanowires. (c), (d) its working principle diagram[49].

    表 1  纳米等离子体激光器参数比较.

    Table 1.  Comparison of the parameters of the plasmonic lasers.

    类别 泵浦条件及阈值 带宽/nm 单模宽度/nm 功率 激光发光机制
    氧化锌纳米线激光器(加州大学伯克利) 室温,Nd:YAG脉冲激光,266 nm,3 ns脉宽,阈值40 kW/cm2 370~400 0.3 无数据 激子复合发光
    亚波长金属-介质-半导体激光器(加州大学圣地亚哥) 室温,Nd:YAG脉冲激光,1064 nm,12 ns脉宽,阈值700 W/mm2 ~1430 0.9 无数据 电子-空穴等离子体激发
    硫化镉纳米线激光-等离子体混合泵浦(加州大学伯克利) 温度小于10 K,脉冲激光,λpump=405 nm,重复频率80 MHz, 脉宽100 fs,阈值80 MW/cm2 480~500 0.5 10 nW 激子自发辐射限制增强效应
    金属纳米腔体半导体异质结激光器(埃因霍芬理工大学,荷兰) 10~77 K,直流电源泵浦;阈值:6 μA (10 K时) 1435~1450 0.3 无数据 电子-空穴等离子体激发
    纳米线阵列等离子体激光器(电子科技大学) 室温,直流电源或脉冲激光源,阈值:30 mA或2 mW/cm2 380~420 0.6 ~500 μW 电子-空穴等离子体激发
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收稿日期:  2016-11-18
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