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3D schematics of the designed GeSn photodetectors based on different architectures.
E-k energy band diagrams of relaxed and strained GeSn devices.
(a) Comparisons of the absorption spectra of relaxed and strained GeSn in fin and pillar array detectors at the Sn content of 0.1. Lpillar and Tfin feature size varys from 100 nm to 500 nm in a step of 100 nm. (b) Calculated absorption spectra for relaxed and tensile strained GeSn waveguide photodetectors at different Sn content. Figure reproduced from: (a) ref. 33, IEEE; (b) ref. 26, Optical Society of America.
Modeled α as a function of wavelength at different electric fields at (a) Ge0.97Sn0.03, (b) Ge0.95Sn0.05, and (c) Ge0.9Sn0.1, respectively.
Mode profiles of both TE and TM modes at different wavelengths in Ge0.90Sn0.10 waveguide.
Propagation loss of (a) TE mode and (b) TM mode in tensile strained Ge0.90Sn0.10 waveguide at various biases.
3D schematic of the Ge1-xSnx/Si1-y-zGeySnz MQW laser wrapped in a Si3N4 liner stressor.
Contour plots for (a) ε[100], (b) ε[010], and (c) ε[001] in the normal cross section plane and (d) ε[100], (e) ε[010], and (f) ε[001] in the radial cross section plane in GeSn well for the Ge0.90Sn0.10/Si0.161Ge0.695Sn0.144 MQW laser wrapped in a 500 nm Si3N4 liner stressor.
(a) Modeled Jth as a function of the Sn composition in GeSn wells for relaxed and tensile strained GeSn/SiGeSn MQW lasers wrapped in a 500 nm Si3N4 liner stressor. Lz is 7 nm and nwell is 20. (b) Modeled optical gain α as a function of injected current density J for the relaxed and tensile strained MQW lasers. Figure reproduced from ref. 36, IEEE.
3D schematic of lattice-matched GeSn/SiGeSn DH LED wrapped in a Si3N4 liner stressor.
(a) Modeled strain components as a function of Sn composition in the intrinsic GeSn layer. (b) Comparison of EG, Γ and EG, L in relaxed and strained GeSn with various Sn compositions. Figure reproduced from ref. 37, Optical Society of America.
Calculated spontaneous emission spectra for the direct transition of GeSn in the lattice-matched GeSn/SiGeSn DHLEDs (a) under different strain status, (b) with different Sn compositions, (c) with different ninjected, and (d) with various ndoping. For all the curves, the stronger and weaker peaks represent rsp, HH and rsp, LH, respectively.
ηIQE versus Sn composition characteristics of lattice-matched GeSn/SiGeSn DH LEDs with the τSRH of 100 and 50 ns.