Opto-Electronic Advances
Opto-Electronic AdvancesPrevious  
2018 Vol. 1, No. 3
Cover Story:
Fang C Z, Liu Y, Zhang Q F, Han G Q, Gao X et al. Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra. Opto-Electronic Advances 1, 180004 (2018).
DOI:10.29026/oea.2018.180004

The team of Prof. Yue Hao, who is an academician of the Chinese Academy of Sciences, and Prof. Genquan Han from Xidian University, has long been committed to germanium tin material and device. They have done a lot of innovative work in high performance GeSn-based CMOS, Beyond CMOS and GeSn photonic devices in middle infrared domain through theory and experiment. The performance of photonic devices based on GeSn can be improved by adjusting its band structure. By incorporating Sn into Ge, GeSn becomes a direct bandgap material and the strain is introduced to achieve the indirect-to-direct transition without increasing the requirement for Sn composition.
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  Review
Online Time:Apr 12, 2018
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Cite this article:
Fang C Z, Liu Y, Zhang Q F, Han G Q, Gao X et al. Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra. Opto-Electronic Advances 1, 180004 (2018). 
  Review
Online Time:May 09, 2018
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Cite this article:
Cheng C H, Shen C C, Kao H Y, Hsieh D H, Wang H Y et al. 850/940-nm VCSEL for optical communication and 3D sensing. Opto-Electronic Advances 1, 180004 (2018).