Opto-Electronic Advances
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2018年第1卷第3期
封面文章:
Cheng C H, Shen C C, Kao H Y, Hsieh D H, Wang H Y et al. 850/940-nm VCSEL for optical communication and 3D sensing. Opto-Electronic Advances 1, 180005 (2018).
DOI: 10.29026/oea.2018.180005

As the main transmitter for the intra-data-center link, the 850-nm vertical cavity surface emitting laser (VCSEL) array module is standardized toward 100/200/400 Gbps or beyond, which effectively increases the cloud transmission rate in data centers to meet the urgent demands on huge amount of audio/video/data exchange and streaming nowadays. Three teams from Taiwan University and Chiao Tung University review the state-of-the-art of the high-speed 850/940-nm VCSEL, discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs MQW was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. Other applications of the near-infrared VCSELs are discussed at the end of the paper.
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在线出版日期:2018年4月12日
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Fang C Z, Liu Y, Zhang Q F, Han G Q, Gao X et al. Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra. Opto-Electronic Advances 1, 180004 (2018). 
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在线出版日期:2018年4月27日
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引用本文:
Cheng C H, Shen C C, Kao H Y, Hsieh D H, Wang H Y et al. 850/940-nm VCSEL for optical communication and 3D sensing. Opto-Electronic Advances 1, 180005 (2018).