Opto-Electronic Advances
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2019 Vol. 2, No. 10
Cover Story:Yatsui T. Recent improvement of silicon absorption in opto-electric devices. Opto-Electron Adv 2, 190023 (2019).

Since Si is an indirect band-gap material, phonon assistance is required in the photo-excitation process to compensate the wave-vector difference between the valence band maximum and the conduction band minimum, respectively. But the poor absorption of Si to light in the telecommunication wavelength range hinders wider applications of Si-based opto-electronic devices.
Prof. Takashi Yatsui from University of Tokyo is dedicated to the research of integrated opto-electronic devices. He systematically reviews the recent studies on improving the optical absorption performance of Si.
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Online Time:Oct 18, 2019
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Cite this article:
Tang T, Niu S X, Ma J G, Qi B, Ren G et al. A survey on control methodologies of disturbance rejections in optical telescope. Opto-Electron Adv 2, 190011 (2019).