This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
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Opto-Electronic Advances
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CN: 51-1781/TN
Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
CN: 51-1781/TN
Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
850/940-nm VCSEL for optical communication and 3D sensing
Author Affiliations
Correspondence: chaohsinwu@ntu.edu.tw hckuo@faculty.nctu.edu.tw grlin@ntu.edu.tw
Abstract
References
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Cheng C H, Shen C C, Kao H Y, Hsieh D H, Wang H Y et al. 850/940-nm VCSEL for optical communication and 3D sensing. Opto-Electronic Advances 1, 180005 (2018).
