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Schematic plot of intrinsic modulation response with increasing photon densities.
(a) Electrical parasitic elements inside a VCSEL. (b) Low pass filter induced by the RC components.
Simulated frequency responses of the 850-nm VCSEL with (a) single- and (b) double-confined oxide layers.
TEM image of the VCSEL with double-confined oxide layers.
Optical spectra of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures.
Near field lateral modal distributions of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures under different bias current conditions and (c) Cross-sectional SEM image of the VCSEL.
Frequency responses of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures under different bias current conditions.
Optical spectra and frequency responses of the differenttype VCSELs.
BERs of the SM VCSEL chip carried and data waveform pre-emphasized PAM-4 data at different bandwidths after BtB, 100-m, 200-m, and 300-m OM4 MMF transmissions with the corresponding eye-diagram.
BER of the 100-m OM4-MM fiber transmitted 16-QAMOFDM data for SM VCSEL under the different receiving powers.
(a) Subcarrier BER responses of the 16-QAM OFDM data before and after 100-m MMF transmissions. (b) BER responses of the FM VCSEL carried 16-QAM OFDM data with and without pre-leveling under 100-m MMF transmissions under different receiving powers.
(a) Far-filed pattern with 6 μm aperture. (b) Intensity distribution under 1 A pulse of 2-D arrays.