A novel spatial double-pulse laser ablation scheme is investigated to enhance the processing quality and efficiency for nanosecond laser ablation of silicon substrate. During the double-pulse laser ablation, two splitted laser beams simultaneously irradiate on silicon surface at a tunable gap. The ablation quality and efficiency are evaluated by both scanning electron microscope and laser scanning confocal microscope. As tuning the gap distance, the ablation can be significantly enhanced if the spatial interaction between the two splitted laser pulses is optimized. The underlying physical mechanism for the interacting spatial double-pulse enhancement effect is attributed to the redistribution of the integrated energy field, corresponding to the temperature field. This new method has great potential applications in laser micromachining of functional devices at higher processing quality and faster speed.
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Opto-Electronic Advances
ISSN: 2096-4579
CN: 51-1781/TN
Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
CN: 51-1781/TN
Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
Enhancement of laser ablation via interacting spatial double-pulse effect
Author Affiliations
Correspondence: elehmh@nus.edu.sg
First published at:Sep 30, 2018
Abstract
References
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Keywords:
Funds:
National Natural Science Foundation of China under Grant (No. 61605162); Singapore Maritime Institute under the research project Grant (No. SMI-2015-OF-10); Natural Science Foundation of Fujian Province of China under Grant (No. 2017J05106); and Collaborative Innovation Center of High-End Equipment Manufacturing in Fujian
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Zhou R, Lin S D, Ding Y, Yang H, Ong Y K K et al. Enhancement of laser ablation via interacting spatial double-pulse effect. Opto-Electron Adv 1, 180014 (2018).
