In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.
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Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
CN: 51-1781/TN
Opto-Electronic Advances is the open-access journal providing rapid publication for peer-reviewed articles that emphasize scientific and technology innovations in all aspects of optics and opto-electronics.
Polariton lasing in InGaN quantum wells at room temperature
Author Affiliations
Correspondence: longhao@xmu.edu.cn bzhang@xmu.edu.cn
First published at:Dec 19, 2019
Abstract
References
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Keywords:
Funds:
National Key Research and Development Program of China (No. 2016YFB0400803), the Science Challenge Project (No. TZ2016003), and the National Natural Science Foundation of China (Nos. 61704140, U1505253)
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Wu J Z, Long H, Shi X L, Luo S, Chen Z H et al. Polariton lasing in InGaN quantum wells at room temperature. Opto-Electron Adv 2, 190014 (2019).
