We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV Excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
First published at:Apr 21, 2020
1. Nakamura S, Pearton S, Fasol G. The Blue Laser Diode: The Complete Story 2nd ed (Springer, Berlin Heidelberg, 2000).
2. Kinoshita T, Obata T, Nagashima T, Yanagi H, Moody B et al. Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy. Appl Phys Express 6, 092103 (2013).
3. Yoshida H, Yamashita Y, Kuwabara M, Kan H. A 342-nm ultraviolet alGaN multiple-quantum-well laser diode. Nat Photonics 2, 551 (2008).
4. Xie J Q, Mita S, Bryan Z, Guo W, Hussey L et al. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet alGaN heterostructures. Appl Phys Lett 102, 171102 (2013).
5. Adivarahan V, Sun W H, Chitnis A, Shatalov M, Wu S et al. 250 nm AlGaN light-emitting diodes. Appl Phys Lett 85, 2175–2177 (2004).
6. Takano T, Narita Y, Horiuchi A, Kawanishi H. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser. Appl Phys Lett 84, 3567–3569 (2004).
7. Wunderer T, Chua C L, Yang Z H, Northrup J E, Johnson N M et al. Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates. Appl Phys Express 4, 092101 (2011).
8. Guo W, Bryan Z, Xie J Q, Kirste R, Mita S et al. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. J Appl Phys 115, 103108 (2014).
9. Kirste R, Guo Q, Dycus J H, Franke A, Mita S et al. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation. Appl Phys Express 11, 082101 (2018).
10. Bryan Z, Bryan I, Kirste R, Collazo R, Sitar Z. Status and challenges in deep UV semiconductor lasers. In Proceedings of 2015 IEEE Summer Topicals Meeting Series (SUM) 123–124 (IEEE, 2015); http://doi.org/10.1109/PHOSST.2015.7248225.
11. Kalapala A R, Liu D, Cho S J, Park J, Zhao D Y et al. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates. Proc SPIE 10918, 109180I (2019).
12. Northrup J E, Chua C L, Yang Z, Wunderer T, Kneissl M et al. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl Phys Lett 100, 021101 (2012).
Defense Advanced Research Projects Agency (DARPA) under grant # HR0011-15-2-0002
Get Citation: Kalapala A R K, Liu D, Cho S J, Park J P, Zhao D Y et al. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates. Opto-Electron Adv 3, 190025 (2020).