Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor ab-sorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review high-lights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical ap-proaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.
[Opto-Electron Adv, 2019, 2(10)]Recent improvement of silicon absorption in opto-electric devices
First published at:Oct 20, 2019
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Get Citation: Yatsui T. Recent improvement of silicon absorption in opto-electric devices. Opto-Electron Adv 2, 190023 (2019).
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