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Wang RZ, Su Y, Fan HJ et al. Tunable vertical cavity microlasers based on MAPbI3 phase change perovskite. Opto-Electron Adv 8, 240220 (2025). doi: 10.29026/oea.2025.240220
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Article Open Access
Tunable vertical cavity microlasers based on MAPbI3 phase change perovskite
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Abstract
Perovskite semiconductors show great promise as gain media for all-solution-processed single-mode microlasers. However, despite the recent efforts to improve their lasing performance, achieving tunable single-mode microlasers remains challenging. In this work, we address this challenge by demonstrating a tunable vertical cavity surface emitting laser (VCSEL) employing a tunable gain medium of halide phase-change perovskites-specifically MAPbI3 perovskite, sandwiched between two highly reflective mirrors composed of bottom-distributed Bragg reflectors (DBRs). This VCSEL possesses single-mode lasing emission with a low threshold of 23.5 μJ cm−2 under 160 K, attributed to strong optical confinement in the high-quality (Q) cavity. Upon the phase change of MAPbI3 perovskite, both its gain and dielectric constant changes dramatically, enabling a wide (Δλ >9 nm) and temperature-sensitive (0.30 nm K−1 rate) spectral tunability of lasing mode in the near-infrared (N-IR) region. The laser displays excellent stability, demonstrating an 80% lifetime of >2.4×107 pulses excitation. Our findings may provide a versatile platform for the next generation of tunable coherent light sources.-
Keywords:
- tunable /
- perovskite /
- phase change /
- vertical cavity surface emitting laser
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References
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Supplementary information for Tunable vertical cavity microlasers based on MAPbI3 phase change perovskite 
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Wang RZ, Su Y, Fan HJ et al. Tunable vertical cavity microlasers based on MAPbI3 phase change perovskite. Opto-Electron Adv 8, 240220 (2025). doi: 10.29026/oea.2025.240220
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Figure 1.
Phase-change perovskite vertical microcavity laser. (a) Schematic of a tunable microlaser based on phase-change perovskite gain medium, sandwiched between Au mirror and DBR reflector sitting on a quartz glass substrate, pumped by blue-violet laser (λ = 405 nm) and emitting a tunable beam in the near-IR from 790.7 nm to 799.5 nm. (b) Conceptual depiction of the two crystal structures of MAPbI3, the low-temperature (130 K) orthorhombic state and room-temperature (298 K) tetragonal state. (c) Cross-sectional SEM picture of the VCSEL. The inset shows a zoomed-in image to present the optimized morphology of Ta2O5/ SiO2 films. Scale bar: 1 μm. (d) The SEM image of a ~300 nm-thick MAPbI3 film residing on the DBR reflectors. Scale bar: 500 nm. The inset is a photograph of the vertical microcavity, scale bar: 1 cm.
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Figure 2.
(a) The absorptance and PL spectra of MAPbI3 nanocrystalline film with tetragonal (130 K, orange line) and orthorhombic (160 K, green line) states, respectively. (b) The ASE spectra of MAPbI3 phase change perovskite with the structural states of tetragonal (130 K, orange line) and orthorhombic (160 K, green line), respectively. (c) Reflectance spectra of top Au flake (orange line) and bottom DBR (green line), the green dashed line is the simulation of the bottom DBR reflectance spectra. (d) The measured PL spectra of the MAPbI3 based microcavity with the different states of tetragonal (29.5 μJ cm−2) and orthorhombic (8.1 μJ cm−2).
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Figure 3.
Laser performance of the VCSEL microlaser at different perovskite phase states. (a) Performance of the VCSEL microlasers based on the tetragonal MAPbI3: 130 K radiation spectra of the VCSEL against pump fluence (left column); light-light curve of the tetragonal laser at 130 K (right column). (b) Performance of the VCSEL with the orthorhombic MAPbI3: room-temperature radiation spectra of the VCSEL against pump fluence (left column); light-light curve of the orthorhombic laser at 160 K (right column).
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Figure 4.
(a) The L−L curve for the MAPbI3 VCSEL by increasing the temperature from 130 K to 160 K. (b) Lasing threshold pumping fluence versus temperature for the device. Stability characterizations of the VCSEL under fs pulsed excitation with pumping fluence at 1.1 Fth for both (c) tetragonal and (d) orthorhombic states, respectively.
