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Fu JT, Leng CQ, Ma R et al. Photo-driven fin field-effect transistors. Opto-Electron Sci 3, 230046 (2024). doi: 10.29026/oes.2024.230046
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Abstract
The integration between infrared detection and modern microelectronics offers unique opportunities for compact and high-resolution infrared imaging. However, silicon, the cornerstone of modern microelectronics, can only detect light within a limited wavelength range (< 1100 nm) due to its bandgap of 1.12 eV, which restricts its utility in the infrared detection realm. Herein, a photo-driven fin field-effect transistor is presented, which breaks the spectral response constraint of conventional silicon detectors while achieving sensitive infrared detection. This device comprises a fin-shaped silicon channel for charge transport and a lead sulfide film for infrared light harvesting. The lead sulfide film wraps the silicon channel to form a “three-dimensional” infrared-sensitive gate, enabling the photovoltage generated at the lead sulfide-silicon junction to effectively modulate the channel conductance. At room temperature, this device realizes a broadband photodetection from visible (635 nm) to short-wave infrared regions (2700 nm), surpassing the working range of the regular indium gallium arsenide and germanium detectors. Furthermore, it exhibits low equivalent noise powers of 3.2×10−12 W·Hz−1/2 and 2.3×10−11 W·Hz−1/2 under 1550 nm and 2700 nm illumination, respectively. These results highlight the significant potential of photo-driven fin field-effect transistors in advancing uncooled silicon-based infrared detection.-
Keywords:
- photodetection /
- silicon-on-insulator /
- lead sulfide /
- heterostructure /
- field-effect transistors
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References
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Fu JT, Leng CQ, Ma R et al. Photo-driven fin field-effect transistors. Opto-Electron Sci 3, 230046 (2024). doi: 10.29026/oes.2024.230046
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Figure 1.
Device structure and working mechanism of the photo-FinFET. (a) A schematic illustration of the PbS-Si photo-FinFET. Infrared light “switches on” the PbS gate, allowing current to flow through the Si channel. (b) Energy band simulation results along the vertical direction of the Si channel. Inset: an enlarged view of the light green box, in which a schematic diagram of the dynamic process of photogenerated carriers under infrared illumination is depicted. (c) Simulated optical generation in the photo-FinFET under excitation by 1550 nm light. (d, e) Simulated electron (majority carriers) density in the photo-FinFET under darkness and 1550 nm illumination, respectively. (f) Electron density extracted along the dash-dotted lines in (d) and (e). (g) Conduction band energy extracted along the Si channel, i.e., the direction indicated by circles and dots in (d) and (e).
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Figure 2.
Visible photoresponse and modulation characteristic of the photo-FinFET. (a) Transfer characteristic curves of the photo-FinFET under 635 nm illumination with varying power densities. (b) Top panel: transfer characteristic curve of the photo-FinFET in the dark state. Bottom panel: schematic diagrams of the carrier dynamics process in the channel of the photo-FinFET when it is in the depletion region and working region, respectively. (c) Output characteristic curves of the photo-FinFET under 635 nm illumination with different power densities. (d) Photocurrent and responsivity as a function of light power density.
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Figure 3.
Infrared phototresponse of the photo-FinFET. (a, b) I-T curves of the photo-FinFET in response to 1550 nm and 2700 nm illumination under different Vbg. The power densities of the 1550 nm and 2700 nm illumination are 603.13 mW/cm2 and 87.04 mW/cm2, respectively. (c, d) Responsivity of the photo-FinFET as a function of the light power density under different Vbg. The wavelengths of the light sources are 1550 nm and 2700 nm, respectively.
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Figure 4.
Response speed, noise and performance summary of the photo-FinFET. (a) Output signal of the photo-FinFET as a function of time under 1550 nm illumination. (b, c) Enlarged views of the rising and falling edges (indicated by the shaded boxed regions in (a)). (d) 3 dB bandwidth measurement results of the photo-FinFET under 635 nm and 1550 nm illumination. (e) Rising and falling times of the photo-FinFET at different Vbg. (f) Noise current of the photo-FinFET at different Vbg. (g) Measured noise current and calculated shot noise of the photo-FinFET. The calculation formula of shot noise is 2qIdark, where q is the elemental charge and Idark is the dark current. (h, i) Performance comparison of the photo-FinFET with previously reported Si-based photodetectors. The responsivity and NEP of the photo-FinFET presented in (h) and (i) are measured at Vbg = 50 V and Vbg = 30 V, respectively. These previously reported Si-based photodetectors are based on different strategies to enable infrared photodetection including, integrating infrared-absorbing materials (red icons), utilizing internal photoemission effect (orange icons), manufacturing black Si (green icons), exploiting intrinsic light absorption of Si (blue icons), and hyper-doping Si (purple icons). Parameters of the photo-FinFET are indicated by black icons.
